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? IRG7PH44K10DPBF irg7ph44k10d-epbf 1 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 base part number package type standard pack orderable part number form quantity IRG7PH44K10DPBF to-247ac tube 25 IRG7PH44K10DPBF irg7ph44k10d-epbf to-247ad t ube 25 irg7ph44k10d-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 70 a ? i c @ t c = 100c continuous collector current 40 i cm pulse collector current, v ge =20v 100 i lm clamped inductive load current, v ge =20v ? 100 i f @ t c = 25c diode continuous forward current 20 i f @ t c = 100c diode continuous forward current 10 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 320 w p d @ t c = 100c maximum power dissipation 120 t j operating junction and -40 to +150 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.40 c/w r ? cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? r ? jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 1.3 v ces = 1200v i c = 40a, t c =100c t sc ?? 10s, t j(max) = 150c v ce(on) typ. = 1.9v @ i c = 25a applications ? industrial motor drive ? ups features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 10s short circuit soa square rbsoa maximum junction temperature 150c increased reliability positive v ce (on) temperature coefficient excellent current sharing in parallel operation rugged transient performance g c e gate collector emitter g g e c ? g g c e insulated gate bipolar transistor with ultrafast soft recovery diode ? IRG7PH44K10DPBF ? to \ 247ac ? irg7ph44k10d \ epbf ? to \ 247ad ? e g n-channel c
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 2 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.80 ? v/c v ge = 0v, i c = 2ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.9 2.4 v i c = 25a, v ge = 15v, t j = 25c ? 2.4 ? i c = 25a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 5.0 ? 7.5 v v ce = v ge , i c = 1.2ma ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -15 ? mv/c v ce = v ge , i c = 1.2ma (25c-150c) gfe forward transconductance ? 16 ? s v ce = 50v, i c = 25a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 35 a v ge = 0v, v ce = 1200v ? 1200 ? v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v v f ? ? 2.5 3.3 v i f = 8.0a ? 2.4 ? i f = 8.0a, t j = 150c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max ? units conditions q g total gate charge (turn-on) ? 135 200 nc i c = 25a q ge gate-to-emitter charge (turn-on) ? 30 45 v ge = 15v q gc gate-to-collector charge (turn-on) ? 65 100 v cc = 600v e on turn-on switching loss ? 2.1 3.0 mj ? i c = 25a, v cc = 600v, v ge =15v r g = 10 ? , t j = 25c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss ? 1.3 2.2 e total total switching loss ? 3.4 5.2 t d(on) turn-on delay time ? 75 95 ns ? t r rise time ? 50 70 t d(off) turn-off delay time ? 315 340 t f fall time ? 95 115 e on turn-on switching loss ? 2.8 ? mj ? i c = 25a, v cc = 600v, v ge =15v r g = 10 ? , t j = 150c energy losses include tail & diode reverse recovery ?? ? e off turn-off switching loss ? 2.2 ? e total total switching loss ? 5.0 ? t d(on) turn-on delay time ? 60 ? ns t r rise time ? 55 ? t d(off) turn-off delay time ? 340 ? t f fall time ? 250 ? c ies input capacitance ? 3050 ? v ge = 0v c oes output capacitance ? 145 ? pf v cc = 30v c res reverse transfer capacitance ? 80 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 150c, i c = 100a full square v cc = 960v, vp 1200v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 10 ? ? ? ? ? s ? t j = 150c,v cc = 600v, vp 1200v v ge = +15v to 0v erec reverse recovery energy of the diode ? 190 ? j t j = 150c t rr diode reverse recovery time ? 130 ? ns v cc = 600v, i f = 8a i rr peak reverse recovery current ? 13 ? a v ge = 15v, rg = 10 ? diode forward voltage drop ? notes: ? v cc = 80% (v ces ), v ge = 20v. ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement .
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 3 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 60 70 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec fig. 2 - maximum dc collector current vs. case temperature 25 50 75 100 125 150 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - power dissipation vs. case temperature fig. 5 - reverse bias soa t j = 150c; v ge = 20v fig. 4 - forward soa t c = 25c; t j 150c; v ge = 15v 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 70 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 128.2w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 4 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 13a i ce = 25a i ce = 50a 0.0 2.0 4.0 6.0 8.0 10.0 v f (v) 0 20 40 60 80 100 120 140 160 i f ( a ) t j =150c t j = 25c tj = -40c fig. 9 - typ. diode forward voltage drop characteristics 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 13a i ce = 25a i ce = 50a 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20s fig. 10 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 25c fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 5 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 0 10 20 30 40 50 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 4 6 8 10 12 14 v ge (v) 0 25 50 75 100 i c e ( a ) t j = 25c t j = 150c fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s fig. 15 - typ. switching time vs. i c t j = 150c; l = 0.62mh; v ce = 600v, r g = 10 ? ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 150c; l = 0.62mh; v ce = 600v, i ce = 25a; v ge = 15v 0 1020304050 i c (a) 0 1000 2000 3000 4000 5000 6000 7000 8000 e n e r g y ( j ) e off e on 0 20406080100 rg ( ? ) 2000 3000 4000 5000 6000 7000 e n e r g y ( j ) e off e on fig. 14 - typ. energy loss vs. i c t j = 150c; l = 0.62mh; v ce = 600v, r g = 10 ? ; v ge = 15v 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. switching time vs. r g t j = 150c; l = 0.62mh; v ce = 600v, i ce = 25a; v ge = 15v 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 13a i ce = 25a i ce = 50a fig. 12 - typical v ce vs. v ge t j = 150c
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 6 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 0 100 200 300 400 500 di f /dt (a/s) 200 400 600 800 1000 1200 1400 1600 1800 q r r ( n c ) ?? ??? ???? ??? 4a 16a 8a fig. 21 - typ. diode q rr vs. di f /dt v cc = 600v; v ge = 15v; t j = 150c 2 4 6 8 10 12 14 16 18 i f (a) 0 50 100 150 200 250 300 350 e n e r g y ( j ) r g =10 ? r g = ?? r g = 47 ? r g = 100 ? fig. 22 - typ. diode e rr vs. i f t j = 150c 0 100 200 300 400 500 di f /dt (a/s) 5 7 9 11 13 15 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i f = 8.0a; t j = 150c 8 1012141618 v ge (v) 10 20 30 40 t i m e ( s ) 40 80 120 160 c u r r e n t ( a ) t sc i sc fig. 23 - v ge vs. short circuit time v cc = 600v; t c = 150c 4 6 8 10 12 14 16 i f (a) 2 6 10 14 18 i r r ( a ) r g = ?? r g = 47 ? r g = 10 ? r g = 100 ? fig. 18 - typ. diode i rr vs. i f t j = 150c 0 20 40 60 80 100 120 r g ( ? ) 2 4 6 8 10 12 14 i r r ( a ) fig. 19 - typ. diode i rr vs. r g t j = 150c
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 7 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 26 - maximum transient thermal impedance, junction-to-case (igbt) fig. 27 - maximum transient thermal impedance, junction-to-case (diode) ri (c/w) ? i (sec) ? 0.010602 0.000026 0.112078 0.000155 0.169631 0.003607 0.098447 0.018763 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.016084 0.000015 0.462040 0.000462 0.554156 0.003501 0.266112 0.021934 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 120 140 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v fig. 25 - typical gate charge vs. v ge i ce = 25a
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 8 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 9 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 -10 0 10 20 30 40 50 -200 0 200 400 600 800 1000 -0.5 0 0.5 1 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss t f -10 0 10 20 30 40 50 -200 0 200 400 600 800 1000 -0.5 0 0.5 1 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -50 0 50 100 150 200 -200 0 200 400 600 800 -20 -10 0 10 ice (a) vce (v) time (s) vce ice -50 0 50 100 150 200 -200 0 200 400 600 800 -20 -10 0 10 ice (a) vce (v) time (s) vce ice -30 -15 0 15 30 45 -0.20 0.00 0.20 0.40 0.60 0.80 i f (a) time (s) peak i rr t rr q rr
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 10 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 to-247ac package outline dimensions are shown in millimeters (inches) to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application. year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 11 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application. assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free"
? IRG7PH44K10DPBF/irg7ph44k10d-epbf 12 www.irf.com ? 2013 international rectifier submit datasheet feedback november 4, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial ? (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.

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